epitaxy

n.

（晶体）取向附生，外延附生；

复数：epitaxies

1. The higher value is comparable to those obtained in CVD epitaxy.
   这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
2. The impurity concentration profile depends on epitaxy growth velocity, growth time and impurity diffusion coefficient.
   如果杂质的扩散系数很小，杂质在外延层中的深度分布是均匀的。

Selective Epitaxy Process Control
Organometallic Vapor-Phase Epitaxy
Substrates for gallium nitride epitaxy
Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
In situ XPS analysis of various iron oxide films grown by NO2-assisted molecular-beam epitaxy
Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
Layer-by-Layer Assembly of Intercalation Compounds and Heterostructures on Surfaces: Toward Molecular "Beaker"Epitaxy