Gan

v.

gin的过去式；

GaN, AlN and InN: a review
GaN Growth Using GaN Buffer Layer
GaN: Processing, defects, and devices
High-Power GaN PN Junction Blue-Light-Emitting Diodes
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
Si- and Ge-doped GaN films grown with GaN buffer layers
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Erratum: “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase ...
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostruc...